Plasma-enhanced etching in an augmented plasma processing system.

ABSTRACT

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

PRIORITY CLAIM

This application claims priority under 35 USC. 119(e) to acommonly-owned provisional patent application entitled “Plasma-EnhancedEtching in an Augmented Plasma Processing System”, U.S. Application No.61/693,382, filed on Aug. 27, 2012 by Eric A. Hudson, all of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

Plasma-enhanced processing has long been employed to process substratesinto integrated circuit dies, which may then be further processed intointegrated circuits for use in a variety of electronic devices.Plasma-enhanced processing includes, for example, plasma-enhancedetching, plasma-enhanced deposition, plasma-enhanced cleaning, and thelike.

In the field of plasma-enhanced etching, a plasma is typically generatedfrom etching feed gas that may include different constituent gases. Thefeed gas is energized by an energy source to form a plasma to etch thesurface of a substrate. By using a variety of masks, different patternsmay be created on various layers of the substrate. The plasma itself maybe created using one or more plasma generation technologies, includingfor example, inductively coupled plasma, capacitively coupled plasma,microwave plasma, etc.

Commercial plasma chambers for etching dielectric wafer films areprimarily based upon parallel-plate capacitively-coupled plasma (CCP).In this type of chamber, RF excitation at one or more RF frequencies isapplied from one or more RF sources to one or more electrodes togenerate an etching plasma from the provided etching source (feed) gas.The etching characteristics of the chamber are controlled throughvariations in numerous input parameters including, for example,pressure, choice of feed gas, flow rate for each feed gas, power for theRF sources, etc.

Even with these numerous control parameters, it is known that thechemical and physical characteristics of the plasma are interdependentand difficult to independently control. In other words, changing aninput parameter (such as RF power or pressure) tends to result inchanges in multiple plasma parameters and/or changes in multiple etchresult parameters. The interdependencies among various plasmacharacteristics and/or various wafer etch results tend to be amplifiedin narrow-gap, capacitively coupled plasma processing chambers of thetype employed in modern dielectric etch applications.

To elaborate, consider a simple example etch process based on CF₄ feedgas only and a single RF excitation frequency. As RF power is increased,the degree of polymerization of the plasma-surface interaction willvary, typically increasing to a maximum and then decreasing. Thisbehavior reflects the decomposition of CF₄ at lower RF powers to formpolymerizing radical species such as CF2. At higher RF powers, secondarydecomposition of those radicals forms less polymerizing species such asC+F. This phenomenon provides some control of the degree ofpolymerization in the plasma using RF power settings.

However, a change in the input RF power also affects physical propertiesof the plasma, for example the plasma density, ion flux, and ion energy.This is because the control of chemical properties of the plasma, suchas polymerization, is affected by the same parameters (such as RF power)that control the physical properties of the plasma (such as plasmadensity) such that the chemical and physical properties are stronglyinterdependent.

If the effects on the plasma characteristics can be decoupled when oneor more input parameters are manipulated, more precise control of waferetch result and a wider process window may be possible. For example, ifthe density of a specific polymerizing species can be controlledindependently (i.e., in a decoupled manner) from the ion flux orelectron temperature, more precise control of wafer etch result and awider process window may be achieved.

Improving the decoupling of plasma characteristics and/or process etchresults in order to optimize the etch to meet current and future etchspecifications is one among many goals of the various embodiments of thepresent invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 shows, in accordance with an embodiment of the invention, adiagram of an augmented plasma processing chamber that includes twoplasma generating region.

FIG. 2 shows, in accordance with an embodiment of the invention, ageneral method for performing dielectric etch using an augmented plasmaprocessing chamber.

FIG. 3 shows, in accordance with various embodiments of the invention,various combinations of parameters for performing dielectric etch usingan augmented plasma processing chamber.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention will now be described in detail with reference toa few embodiments thereof as illustrated in the accompanying drawings.In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art, that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process steps and/or structureshave not been described in detail in order to not unnecessarily obscurethe present invention.

Various embodiments are described hereinbelow, including methods andtechniques. It should be kept in mind that the invention might alsocover articles of manufacture that includes a computer readable mediumon which computer-readable instructions for carrying out embodiments ofthe inventive technique are stored. The computer readable medium mayinclude, for example, semiconductor, magnetic, opto-magnetic, optical,or other forms of computer readable medium for storing computer readablecode. Further, the invention may also cover apparatuses for practicingembodiments of the invention. Such apparatus may include circuits,dedicated and/or programmable, to carry out tasks pertaining toembodiments of the invention. Examples of such apparatus include ageneral-purpose computer and/or a dedicated computing device whenappropriately programmed and may include a combination of acomputer/computing device and dedicated/programmable circuits adaptedfor the various tasks pertaining to embodiments of the invention.

Generally speaking, etch process optimization in chambers where inputparameters are coupled in their effects on process result parameterstends to involve tradeoffs. Tuning the etch process to achieve etchspecification with respect to one etch result parameter (e.g., etchrate) often results in changes and often detrimental changes in anotheretch result parameter (such as etch selectivity). In some cases, anacceptable trade-off cannot be found and the desired etch is simply notattainable with a given recipe. In other cases, time-consuming iterativeoptimization steps are required to find the appropriate combination ofinput parameters that achieves an acceptable trade-off among the variousetch result parameters.

Embodiments of the invention seek to reduce the interdependencies amongselective etch result parameters. By making certain input parametersless coupled in their effects on the process result parameters,individual process result parameters may be tuned in a manner that ismore independent from other process result parameters. In other words,embodiments of the invention seek to influence, by changing certaininput parameters, certain individual process result parameterssubstantially independently or more independently from other processresult parameters. The net effect of this decoupling is faster tuning ofinput parameters (i.e., control parameters) to achieve a process resultwith a desired set of target process result parameters. In one or moreembodiments, wider process windows are achieved by decoupling processresult parameters. In these cases, new and previously unavailablesubstrate processing conditions may be realized, including regimespreviously unavailable in prior art chambers where process resultparameters are more coupled when one or more input parameters arechanged.

In one or more embodiments, a secondary plasma is generated and employedto influence the primary plasma that is primarily responsible foretching the substrate. In the specific case of dielectric etches, thehardware improvement involves augmenting a parallel-platecapacitively-coupled chamber with a secondary plasma generated inseparate plasma generating region. The secondary plasma injectschemically and/or physically excited neutral species into the primarywafer processing plasma region, resulting in an augmented primary plasmafor processing the substrate.

In one or more embodiments, the primary plasma (which is disposed in thewafer processing plasma region immediately above the wafer surface) andthe secondary plasma (which is generated in a separate secondary plasmagenerating region and injected into the wafer processing plasma region)are separated electrically and physically by a semi-barrier structurewhich allows neutral species to pass from the secondary plasmagenerating region to the primary plasma generating region but preventsappreciable transfer of charged particles, plasma, and/or electricfields from the primary plasma generating region to the secondary plasmagenerating region.

In one or more embodiments, the secondary plasma has an independentexcitation source, such as an RF power supply or a microwave source,which can be controlled to affect the secondary plasma without directlyor significantly affecting the charged particles or electric fields inthe primary plasma generating region. The technology employed togenerate the secondary plasma is not limited to any particular plasmageneration technology and may include, for example, inductively coupledplasma, capacitively coupled plasma, microwave plasma, ECR(electron-cyclotron plasma), etc.

In an embodiment, the primary plasma in the primary plasma generatingregion (i.e., the plasma disposed above the substrate surface to etchthe substrate surface) is generated using a parallel-plate arrangementvia the capacitively coupling mechanism. In this embodiment, thesubstrate is disposed on a chuck that is energized by one or more RFsignals. The upper electrode of this primary plasma generating region isgrounded, and one or more confinement rings may be employed to furtherconfine the primary plasma and/or to control the exhaust rate. Theprimary plasma is generated with its own set of input parameters and itsprimary feed gas, which may include a set of constituent feed gas(es)for forming the primary plasma. This CCP (capacitively coupled plasma)arrangement is more or less typical of capacitively coupled plasmaprocessing chambers.

In addition to the primary plasma, a secondary plasma is generated in aseparate secondary plasma generating region, with a different set ofcontrol parameters and utilizing a secondary feed gas that may include aset of constituent feed gas(es) for generating the secondary plasma.Neutral species are transferred from the secondary plasma to the primaryplasma through the aforementioned semi-barrier, influencing theprocessing conditions at the substrate and thus modifying the processresult. In one or more embodiments, the system is designed to minimizethe influence of the primary plasma properties upon the secondary plasmawhile maximizing the influence of secondary plasma properties upon theprimary plasma.

Because the plasma properties of the secondary plasma are substantiallydecoupled from the control parameters that affect the primary plasma,the new control parameters introduced for generating the secondaryplasma represent additional process control parameters which are notclosely coupled to the primary plasma control parameters.

In this way, embodiments of the invention achieve significantimprovement in decoupling control parameters, and provide a greaterability to independently adjust the individual process results. Thisresults in less restrictive trade-offs and a faster capability tooptimize the etch to achieve a set of process results, which are nowmore decoupled. Additionally, the invention may also open up regimes ofprimary plasma properties which cannot be achieved using conventionalmethods, providing new process capabilities.

Further, in one or more specific embodiments, control parametersassociated with the secondary plasma are focused upon controlling thedissociation of the secondary feed gas while control parametersassociated with the primary plasma are focused upon controlling theionization of the primary feed gas. Since the mechanism for controllingdissociation is decoupled from the mechanism for controlling ionization,improved process optimization and new operating windows may be achieved.

The features and advantages of embodiments of the invention may bebetter understood with reference to the figures and discussions thatfollow.

FIG. 1 shows, in accordance with an embodiment of the invention, anaugmented plasma chamber 100 having two separate plasma generatingregions. There is shown in FIG. 1 a primary plasma region 102, which isbound at its lower and upper extremities by substrate 104 and upperelectrode assembly 106 respectively. A set of confinement rings(conventional and not shown) may also be optionally employed to surroundprimary plasma region 102 to prevent unwanted plasma ignition outside ofthe primary plasma generating region and/or to control the evacuationrate of byproduct exhaust gas(es) from primary plasma generating region102.

In the embodiment of FIG. 1, substrate 104 rests on a chuck 108, whichacts as the powered electrode for the primary plasma generating region102. Chuck 108 is energized by an RF power source 110 with one or moreRF signals. The lower surface 106A of upper electrode assembly 106 isgrounded and acts as a second electrode for the primary plasma inprimary plasma generating region 102. This primary plasma is generatedusing a parallel-plate, capacitively coupled plasma mechanism from aprimary feed gas comprising one or more constituent gases for formingthe primary plasma. The primary feed gas is fed directly into primaryplasma region 102 from primary feed gas delivery system 152 in FIG. 1.

In the example of FIG. 1, the secondary plasma region 120 is alsoanother parallel-plate capacitively coupled arrangement that is bound atits lower and upper extremities by the upper surface 106B of upperelectrode assembly 106 and top electrode assembly 132 respectively. Inthe example of FIG. 1, secondary plasma region 120 is bound by chamberwall 134 although a set of confinement rings (conventional and notshown) may also be optionally employed to surround secondary plasmaregion 120 to prevent unwanted plasma ignition outside of the secondaryplasma generating region and/or to control the evacuation rate ofbyproduct exhaust gas(es) from the secondary plasma generating region120. Top electrode assembly 132 may be movable in order to control thevolume of the secondary plasma generating region and/or to control thegas residence time. The gas residence time may also be controlled bycontrolling the by-product exhaust rate.

The upper surface 106B of upper electrode assembly 106 is grounded andacts as one electrode for the secondary plasma in secondary plasmagenerating region 120. Top electrode assembly 132 is energized by aseparate RF power supply 136, which may supply one or more RF signals totop electrode assembly 132. This secondary plasma is generated from asecondary feed gas comprising one or more constituent gases for formingthe secondary plasma. The secondary feed gas is fed directly intosecondary plasma region 120 from secondary feed gas delivery system 134in FIG. 1.

Although the secondary plasma is generated using a parallel plate,capacitively coupled plasma generation arrangement, it should be notedthat embodiments of the invention are not limited to this plasmageneration technology for generating the secondary plasma. It iscontemplated that the secondary plasma may be generated using, forexample, an inductively coupled plasma generation mechanism employingone or more RF coils or antennas to inductively couple the RF energy tothe secondary feed gas. Alternatively or additionally, it iscontemplated that the secondary plasma may be generated using, forexample, a microwave source and an appropriate microwave plasmageneration chamber. In fact, any suitable plasma generation technologymay be employed to independently generate the secondary plasma.

As mentioned, upper electrode assembly 106 acts as a ground electrodefor both the primary plasma generating region 102 and the secondaryplasma generating region 120. Further, in one or more embodiments, upperelectrode assembly 106 performs the gas delivery function for theprimary feed gas into the primary plasma generating region 102. Forexample, upper electrode assembly 106 may include a showerhead-typearrangement or an injection jet orifice-type arrangement for providingthe primary feed gas into the primary plasma generating region. Ifdesired, upper electrode assembly may be temperature controlled byproviding heating/cooling coils circulating the appropriateheating/cooling fluid through channels built into upper electrodeassembly 106.

As mentioned, the secondary plasma in secondary plasma generating region120 is generated using a different secondary feed gas having a differentcomposition (e.g. flow rate and/or constituent gases and/or gasresidence time) from the primary feed gas. More importantly, it isdesirable that neutral species from the secondary plasma be allowed tomigrate from the secondary plasma generating region 120 into primaryplasma generating region 102 but charged species are prevented frommigrating from the primary plasma generating region 102 into secondaryplasma generating region 120. To achieve this goal, one or more of theinnovations below may be employed.

For example, the operating conditions in the secondary plasma region maybe set to emphasize dissociation of the secondary feed gas overionization. To elaborate, dissociation refers generally to theinteraction of electrons with neutral molecules to break the chemicalbond and to produce neutral reactive species. For example, H₂ may bedissociated into two hydrogen atoms, both of which may be neutral.Ionization, on the other hand, refers generally to the interaction ofelectrons with neutral molecules to produce positive ions and electrons.Ionizing H₂ produces a H₂+ ion and an electron, for example. By settinginput parameters for the secondary plasma generation to emphasizedissociation of the secondary feed gas over ionization, more dissociatedneutral species may be obtained in the secondary plasma generatingregion.

As another alternative or additional innovation, the pressure in thesecondary plasma generating region 120 may be set higher than thepressure in the primary plasma generating region 102 to encourage themigration of the dissociated neutral species from secondary plasmagenerating region 120 to primary plasma generating region 102. Thepressure in the secondary plasma generating region may be set in aregime to discourage neutral species recombination, in one or moreembodiments.

As another alternative or additional innovation, the holes or slots 150disposed in upper electrode assembly 106 to permit the migration ofdissociated neutral species from secondary plasma generating region 102to primary plasma generating region 120 may have a high aspect ratio todiscourage plasma formation in the holes. These holes or slots may bedesigned to alternatively or additionally act as a neutral diffusionbarrier to prevent neutral species migration from the primary plasmagenerating region 102 to secondary plasma generating region 120. Equallyimportant is the concern for uniformity of migrated neutral speciesdistribution in the primary plasma generating region. For this reason,it is desirable to employ an array of holes or slots with the holes orslots uniformly or widely distributed above the substrate surface inorder to ensure a relatively uniform distribution of migrated neutralspecies over the substrate to optimize process uniformity across thesubstrate.

As another alternative or additional innovation, the pressure in thesecondary plasma generating region 120 and/or the pressure in theprimary plasma generating region 102 may be set to encourage laminarflow in the holes or slots. A laminar flow condition would reduce thenumber of collisions between the migrating neutral species and the wallsof the holes or slots, thereby reducing neutral species recombinationprior to being delivered to the primary plasma generating region 102.

More importantly, input parameters that control the dissociation of thesecondary plasma may be controlled independently from input parametersthat are employed to generate the primary plasma. As such, dissociationand ionization may be tuned in a more decoupled manner, leading to moreefficient process tuning and wider operating conditions, includingprocess conditions previously unavailable with prior art chamberswhereby the mechanisms for dissociation and ionization are highlyinterdependent and coupled.

In accordance with embodiments of the present invention, dielectricetching in the augmented plasma processing chamber involves the use of asecondary feed gas that is different in composition from the primaryfeed gas. The inventors herein propose various combinations of secondaryfeed gas/primary feed gas for plasma generation in the two respectiveplasma generating regions. The dissociated neutral species from theproposed secondary feed gas may be controlled in a de-coupled mannerfrom the control mechanisms that govern the generation of the primaryplasma in the primary plasma generating region.

Various unique combination of secondary feed gas into the secondaryplasma generating region (which may employ a CCP-type mechanism forplasma generation) and primary feed gas into the primary plasmagenerating region (which may also employ a CCP-type mechanism for plasmageneration) are discussed below. It should be understood that in otherembodiments, different plasma generation mechanisms (such as inductivelycoupled plasma or ECR or microwave) may be employed for generating thesecondary plasma and/or the primary plasma. There is also no requirementthat the same plasma generating technology/mechanism must be employedfor both plasma generating regions.

In one or more embodiments, the secondary feed gas comprises a differentset of constituent gases when compared to the set of constituent gasescomprising the primary feed gas. In one or more embodiments, theconstituent gases are mutually exclusive in the sense that if aconstituent gas is present in the primary feed gas, that constituent gasis not employed in the secondary feed gas and vice versa. In otherembodiments, the constituent gases are not mutually exclusive in that agiven constituent gas (such as argon) may be present in both the primaryfeed gas and the secondary feed gas.

In one or more embodiments, polymer depositing gases such as one or moreof the fluorocarbon gases (e.g., CF₄, C₄F₈, CHF3, etc.) may not beemployed in the secondary feed gas to avoid a build up of polymer in theholes or slots employed to transfer the neutral species from thesecondary plasma generating region to the primary plasma generatingregion. In other embodiments, polymer depositing gases such as one ormore of the fluorocarbon gases (e.g., CF₄, C₄F₈, CHF3, etc.) may beemployed in the secondary feed gas and any polymer buildup in the holesor slots employed to transfer the neutral species from the secondaryplasma generating region to the primary plasma generating region may beaddressed with cleaning technologies such as waferless autoclean.

FIG. 2 shows, in accordance with an embodiment of the present invention,a general method for performing dielectric etch using the augmentedplasma processing chamber that substantive decouples control overdissociation from control over ionization of the feed gases. Generallyspeaking, embodiments of the invention permit selective dissociation ofcertain constituent gases and not others by separating the constituentgases into two different feed gases: the secondary feed gas that is fedinto the secondary plasma generating region and the primary feed gasthat is fed into the primary plasma generating region. Further, theinput parameters that control plasma generation and/or dissociation inthe secondary plasma generating region are independent from the inputparameters that control the plasma generation in the primary plasmagenerating region. In this manner, each plasma may be independentlytuned with reduced, minimal, or no influence or interdependency orcoupling of plasma results between the two plasmas when one plasma istuned.

With reference to FIG. 2, in step 202, a secondary feed gas is providedto the secondary plasma generating region. In step 204, a primary feedgas is provided to the primary plasma generating region. In step 206, asecondary plasma is generated from the secondary feed gas.Simultaneously, in step 208, a primary plasma is generated from theprimary feed gas.

During steps 206 and 208, process conditions (such as higher pressure inthe secondary plasma generating region and/or a processing regime thatemphasizes dissociation in the secondary plasma generating region and aprocessing regime that emphasizes ionization in the primary plasmagenerating region, and the like) induces the migration of reactiveneutral species from the secondary plasma in the secondary plasmagenerating region into the primary plasma in the primary plasmagenerating region.

The dissociation of the secondary feed gas is independently controlledby a set of input parameters into the secondary plasma generatingregion. It is contemplated that the generation of radical species in thesecondary plasma generating region may be tuned by varying the RF powerlevel (e.g., RF power to the top electrode 132), the flow rate ofsecondary feed gas, the secondary feed gas residence time, and/or the RFfrequency employed to generate the secondary plasma.

The generation of the primary plasma in the primary plasma generatingregion is independently controlled by a set of input parameters into theprimary plasma generating region. In this manner, these two plasmas maybe generated and tuned in a decoupled manner.

The dissociated neutral species from the secondary plasma are thenemployed to augment the primary plasma. The augmented plasma in theprimary plasma generating region is then employed to etch the dielectriclayer on the wafer surface (step 210).

In one or more embodiments, fluorocarbon (FC) or hydro fluorocarbon(HFC) source gases are employed in the primary gas feed mixture, incombination with H₂ as part of the secondary gas feed mixture. Thesecombinations are shown in Rows 1 and 2 of Table 1 in FIG. 3 and may beuseful in fluorine-based etch applications (e.g., to etch SiO_(x),SiCOH, SiN_(x), SiCN, etc.) where the secondary plasma is used toincrease the extent of polymerization in the primary plasma and/or onthe substrate surface.

It is well known that small amounts of H₂ added to FC or HFC mixturescan cause greater plasma polymerization in accordance with one or moreembodiments, the secondary plasma produces H radicals, which aretransferred to the primary plasma, influencing the degree ofpolymerization in a highly decoupled manner in the wafer processingregion (i.e., in the primary plasma generating region).

It is believed that lower fluxes of H will increase polymerization, andthen as H radical flux increases (e.g., by increasing power or pressurein secondary plasma), eventually the H radicals will begin to decreasepolymerization due to ability of H radicals to etch polymer. Theexpectation is that the effect of the injected H radicals from thesecondary plasma will be qualitatively different from the simpleaddition of H₂ source gas to the primary gas mixture.

In one or more embodiments, the combination of Row 1, Table 1 may beuseful for applications such as ARC (anti-reflective coating) open. TheARC layer may, in some applications, represent for example bottom ARC,also known as BARC, or silicon-containing ARC, also known as SiARC. Thiscombination of Row 1, Table 1 may also be useful for CD (criticaldimension) shrink of holes or vias on the substrate surface, where verylow powers (see Power Regime in Row 1 of Table 1) are typically requiredto control feature faceting and it is therefore difficult to generatesufficient polymer. By pre-dissociating the H₂ in the secondary plasmagenerating region in the case of Row 1 of Table 1, polymer formationcontrol may be improved independent of ion flux or ion energy level inthe primary plasma generating region.

Alternatively, for general etching of Si-based materials (Row 2, Table1), H₂ may be input into the secondary plasma generating region whileCF₄, C_(x)F_(y), and/or CH_(x)F_(y) (with x and y representing integervalues) constituent gases may be input into the primary plasma region.The power regime for the primary plasma generating region can be anysuitable power regime (see Row 2, Table 1). By pre-dissociating the H₂in the secondary plasma generating region in the case of Row 2 of Table1, an additional independent control knob is provided for decoupledcontrol of polymer formation.

One benefit of these embodiments is that the flux of vacuum ultraviolet(VUV) radiation due to the H₂ molecule may be greatly reduced in thewafer processing region (i.e., the primary plasma generating regionimmediately above the substrate surface), compared to the case where H₂is part of the primary gas mixture, because a large fraction of H₂ willbe dissociated in the secondary plasma. This may have benefits at thesubstrate because H₂-induced VUV radiation is intense and is known todamage low-k dielectric materials.

For similar reasons, a photoresist strip process in the presence oflow-k dielectric materials can be designed to include the beneficial Hradicals while largely excluding the damaging H₂-induced VUV radiation.H radicals are known to cause less damage to low-k dielectric materialsthan O radicals, but ordinarily it is difficult to produce H withoutusing H₂ source gas in the primary gas mixture. In the inventive case,H₂ is part of the secondary gas mixture to form the secondary plasma toprovide injected H radicals but very little H₂ into the primary plasma.The source gases for the primary plasma can include N₂ or other fairlyharmless and/or inert gases to sustain the plasma and provide ions forbombardment, for example.

In the case where it is desirable to introduce polymerizing chemistriesin the secondary plasma, the secondary gas mixture could include some orall of the constituent polymerizing constituent gases if desired. Inthis case, some or all of the polymerizing gases may be pre-dissociatedin the secondary plasma generating region before entering the primaryplasma generating region. For example, a typical oxide etch chemistrymay include C₄F₈, O₂, and Ar. In one or more embodiments, some or all ofthe C₄F₈ and/or some or all of the Ar may be input into the secondaryplasma generating region for pre-dissociation. The O₂ may be input intothe primary plasma generating region only in this embodiment.Conversely, in another embodiment, the O₂ may be input into thesecondary plasma generating region for pre-dissociation while the C₄F₈and Ar may be input into the primary plasma generating region.

Another category of applications is fluorine-based etch applications(e.g., to etch SiOx, SiCOH, SiNx, SiCN, etc.) where the secondary plasmais used to decrease the extent of polymerization in the primary plasma.This is accomplished by selecting fluorocarbon (FC) or hydrofluorocarbon (HFC) source gases as part of the primary process gasmixture, in combination with a polymer-retarding gas such as O₂, N₂,NF₃, etc. as part of the secondary process gas mixture. Commonapplications include such dielectric etches that rely on fluorocarbonsuch as trench etches, mask open, barrier open, etc. These applicationsare shown in Row 3 of Table 1 where the power regime for the primaryplasma generating region is low bias.

It is well known that small amounts of O₂, N₂, NF₃ added to FC or HFCmixtures causes decreased plasma polymerization, because these gases actto etch polymer. In one or more embodiments, the secondary plasmaproduces O, N, F, and/or NF_(x) radicals which are transferred to theprimary plasma, influencing the degree of polymerization (by influencingthe degree of polymer removal via etchant or oxidizer control) in theprimary plasma with a degree of control and decoupling which would notbe achieved by the prior art by simply adding the polymer-retarding gasto the primary process gas mixture.

In one or more embodiments, NF₃ and Ar are input into the secondaryplasma generating region for pre-dissociation while fluorocarbon gasesand O₂ are input into the primary plasma generating region. In oneembodiment, a silicon top electrode is employed in the secondary plasmagenerating region and chemically produced SiF_(x)(e.g., SiF, SiF₂, SiF₃,SiF₄, etc.) from the etch reaction in the secondary plasma generatingregion may be injected from the secondary plasma generating region intothe primary plasma generating region. This approach may permit betterand/or more independent control of SiFx injection may be useful for celletch applications, for example.

Another category of applications relies on a different role of thesecondary plasma. Instead of injecting chemically activated radicalspecies, as in the previous categories, the role of the secondary plasmain these embodiments is to inject hyper-thermal energetic species suchas atoms and molecules in metastable excited electronic states andmolecules in highly excited vibrational states. These applications areshown in Rows 4 and Row 5 of Table 1.

For example, He, Ne, Ar, Kr, and/or Xe could be included in thesecondary process gas mixture, in order to inject metastable states ofthese atoms into the wafer processing plasma. Alternatively oradditionally, N₂ could be included in the secondary process gas mixturebecause N₂ is known to form appreciable densities of metastables andvibrationally excited states under typical plasma conditions, with arelatively low degree of dissociation. These energetic species interactdifferently with the primary plasma, as compared to atoms and moleculesin the primary process gas mixture which are introduced in groundelectronic states and thermalized vibrational states. In particular,energetically excited atoms and molecules have lower ionizationthresholds, and will tend to reduce the electron temperature (Te) of theprimary plasma and/or increase the plasma density.

The control parameters of the secondary plasma, including RF power andpressure, could be used to independently vary the injection of energeticspecies into the wafer processing primary plasma. These secondarycontrol parameters should influence the primary plasma conditions toproduce results that are fairly decoupled from the primary controlparameters. Additionally, the ability to produce a lower electrontemperature primary plasma without sacrificing plasma density shouldopen up high-ion-flux/low-dissociation plasma regimes which are notordinarily available with prior art hardware and methods. Applicationsinclude high aspect ratio contact (HARC) etching or cell etching, wherethe power regime may be high bias with high density plasma in theprimary plasma generating region.

Another application may involve low damage photoresist strip (see Row 6of Table 1) where it is desirable to prevent damage to the low-Kmaterial (such as at sidewalls or bottom of vias) while performingphotoresist strip. In this application, H₂ and/or N₂ may be input intothe secondary plasma generating region for pre-dissociation to formhydrogen radicals (which tends not to generate low-K damaging VUVradiation compared to H₂) and/or nitrogen radicals. Further, hydrogenand/or nitrogen radicals maybe increased without a correspondingincrease of ion flux in the primary plasma generating region. This isadvantageous for avoiding damage to the low-K material as increased ionflux tends to degrade the low-K material. CO₂ may be input into theprimary plasma generating region, for example, if desired. The preferredpower regime in the primary plasma generating region is low bias, in anembodiment.

Another category of applications is somewhat different in that the onlythe secondary plasma is powered. An example of this category ofapplications is shown in Row 7 of Table 1 and is useful in situationswhere full plasma processing is only needed for some steps of amulti-step processing sequence. In these embodiments, for certain steps,it would be desirable to process the wafer with a downstream plasmacondition (e.g., downstream strip or downstream etch), such thatactivated neutral species such as radicals reach the substrate but thereis no direct plasma contact. This achieves a highly chemical treatmentregime with no ion or electron bombardment from the primary plasma. Thisprocess regime may be useful, for example, to cure polymers (maskhardening), to defluorinate etched features to prevent metal corrosionin air, or to strip photoresist, or the like in the same tool that isemployed for other etches. In this manner, the same etch chamber may beemployed for both etching and downstream strip/downstream etch withoutrequiring the use of another chamber for the downstream strip/downstreametch as would be the case with prior art hardware.

One or more embodiments of the invention relate to a simplifiedmigration path for tuning process parameters in order to achieve targetprocess parameter results. With the RF power to the secondary plasmagenerating region turned off and the secondary feed gas injected intothe secondary plasma generating region and simply allowed to diffuse ormigrate into the primary plasma generating region (or all feed gasesinputted into the primary plasma generating region), the situation isanalogous to prior art chamber use scenarios where all constituent gasesare injected into a single plasma generating region. This provides aconvenient and familiar starting point for chamber operators to startthe optimizing process. By turning on the RF power to the secondaryplasma generating region, an independent control knob is provided forcontrolling the dissociation of the secondary feed gas in a manner thatis not available in the prior art. The turning on of the RF power to thesecondary plasma generating region provides a gradual introduction todecoupled process tuning for chamber operators, which simplifiestraining due to the incremental versus disruptive nature of the improvedtuning process and the fact that the optimization starts from a knownprior art-like starting point.

As can be appreciated from the foregoing, embodiments of the inventionopen up process windows by making input parameters less coupled in theireffects on process results. Accordingly, tradeoffs betweeninterdependent process results are fewer, and process tuning may beperformed more rapidly to achieve a desired set of process results sincechanges targeted for one process result has less influence on anotherprocess result when the process results are more decoupled. In thedielectric etch applications, the decoupling of dissociation fromionization permits faster process tuning to achieve high performanceprocess result targets or permits access to wafer processing conditionsthat are unavailable with prior art dielectric etch chambers. Variouscombinations of primary and secondary feed gases have been proposed forimproving different etch applications or for different etch effects.

Further, embodiments of the invention facilitate incremental migrationto existing process optimization methodology. Tool operators may startwith a current recipe as a starting point by turning off the power tothe secondary plasma generating region and gradually utilize thedecoupling benefits of embodiments of the invention by gradually turningon the power and/or varying other input parameters to the secondaryplasma generating region. This is a distinct advantage in training anduse over more disruptive approaches, which tend to increase adoptionrisks for tool operators.

While this invention has been described in terms of several preferredembodiments, there are alterations, permutations, and equivalents, whichfall within the scope of this invention. Although various examples areprovided herein, it is intended that these examples be illustrative andnot limiting with respect to the invention. Also, the title and summaryare provided herein for convenience and should not be used to construethe scope of the claims herein. Further, the abstract is written in ahighly abbreviated form and is provided herein for convenience and thusshould not be employed to construe or limit the overall invention, whichis expressed in the claims. If the term “set” is employed herein, suchterm is intended to have its commonly understood mathematical meaning tocover zero, one, or more than one member. It should also be noted thatthere are many alternative ways of implementing the methods andapparatuses of the present invention. It is therefore intended that thefollowing appended claims be interpreted as including all suchalterations, permutations, and equivalents as fall within the truespirit and scope of the present invention.

1. A method for etching a substrate in a plasma processing chamberhaving at least a primary plasma generating region and a secondaryplasma generating region separated from said primary plasma generatingregion by a semi-barrier structure, comprising: providing a primary feedgas into said primary plasma generating region; providing a secondaryfeed gas into said secondary plasma generating region, said secondaryfeed gas being different from said primary feed gas; generating aprimary plasma from said primary feed gas; generating a secondary plasmafrom said secondary feed gas; etching said substrate using at least saidprimary plasma and neutral species from said secondary plasma, saidneutral species migrating from said secondary plasma generating regionto said primary plasma generating region across said semi-barrierstructure, said semi-barrier structure but prevents appreciable transferof charged particles, plasma, from the primary plasma generating regionto the secondary plasma generating region.
 2. The method of claim 1wherein said etching is a dielectric etch.
 3. The method of claim 1wherein a pressure in said secondary plasma generating region is greaterthan a pressure in said primary plasma generating region.
 4. The methodof claim 1 wherein said secondary feed gas is a non-polymer forming gas.5. The method of claim 1 further comprising setting input parameters forsaid secondary plasma generating region to emphasize dissociation ofsaid secondary feed gas, wherein said secondary feed gas includes H₂. 6.The method of claim 5 wherein said primary feed gas includes at leastone of CF₄, C_(x)F_(y), and CH_(x)F_(y) where x and y are integervalues.
 7. The method of claim 1 further comprising setting inputparameters for said secondary plasma generating region to emphasizedissociation of said secondary feed gas, wherein said secondary feed gasincludes at least one of O₂, N₂ and NF₃.
 8. The method of claim 7wherein said primary feed gas includes at least one of argon and afluorocarbon-containing gas.
 9. The method of claim 1 further comprisingsetting input parameters for said secondary plasma generating region toemphasize dissociation of said secondary feed gas, wherein saidsecondary feed gas includes at least one of argon and N₂.
 10. The methodof claim 9 wherein said primary feed gas includes at least one of argon,O₂ and a fluorocarbon-containing gas.
 11. The method of claim 1 furthercomprising setting input parameters for said secondary plasma generatingregion to emphasize dissociation of said secondary feed gas, whereinsaid secondary feed gas includes N₂.
 12. The method of claim 9 whereinsaid primary feed gas includes CO₂.
 13. The method of claim 1 furthercomprising setting input parameters for said secondary plasma generatingregion to emphasize dissociation of said secondary feed gas, whereinsaid secondary feed gas includes H₂ and wherein said primary feed gasincludes N₂.
 14. A method for etching a substrate in a plasma processingchamber having at least a primary plasma generating region and asecondary plasma generating region separated from said primary plasmagenerating region by a semi-barrier structure, comprising: providing aprimary feed gas into said primary plasma generating region; providing asecondary feed gas into said secondary plasma generating region, saidsecondary feed gas being different from said primary feed gas;generating a primary plasma from said primary feed gas; generating asecondary plasma from said secondary feed gas; etching said substrateusing at least said primary plasma and neutral species from saidsecondary plasma, said neutral species migrating from said secondaryplasma generating region to said primary plasma generating region acrosssaid barrier structure; thereafter turning off a power source to saidprimary plasma generating region, thereby inhibiting formation of saidprimary plasma; providing another secondary feed gas into said secondaryplasma generating region to generate another secondary plasma;thereafter performing downstream plasma processing on said substrateusing species from said another secondary plasma after said species fromsaid another secondary plasma migrates across said barrier structure.15. The method of claim 14 wherein said etching represents a dielectricetch.
 16. The method of claim 15 wherein said another secondary feed gasincludes H₂.
 17. The method of claim 14 further comprising setting inputparameters for said secondary plasma generating region to emphasizedissociation of at least one of said secondary feed gas and said anothersecondary feed gas.
 18. The method of claim 14 wherein said downstreamplasma processing represents defluorination.
 19. A method for etching asubstrate in a plasma processing chamber having at least a primaryplasma generating region and a secondary plasma generating regionseparated from said primary plasma generating region by a semi-barrierstructure, comprising: providing a primary feed gas into said primaryplasma generating region; providing a secondary feed gas into saidsecondary plasma generating region, said secondary feed gas beingdifferent from said primary feed gas; generating a primary plasma fromsaid primary feed gas, said generating said primary plasma employing acapacitively coupling mechanism; generating a secondary plasma from saidsecondary feed gas; etching said substrate using at least said primaryplasma and neutral species from said secondary plasma, said neutralspecies migrating from said secondary plasma generating region to saidprimary plasma generating region across said semi-barrier structure,said semi-barrier structure but prevents appreciable transfer of chargedparticles, plasma, from the primary plasma generating region to thesecondary plasma generating region.
 20. The method of claim 19 whereinsaid generating said secondary plasma employing a capacitively couplingmechanism.
 21. The method of claim 19 wherein said semi-barrierstructure includes a set of holes, each hole in said set of holes havinga high aspect ratio configured to inhibit the formation of a plasma insaid each hole.